Characterization of boron charge traps at the interface of Si/SiO2 using second harmonic generation
نویسندگان
چکیده
second harmonic generation H. Park, J. Qi, Y. Xu, K. Varga, S. M. Weiss, B. R. Rogers, G. Lüpke, and N. Tolk Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, USA Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, Tennessee 37235, USA Department of Applied Science, College of Mary and Williams, Williamsburg, Virginia 23187, USA
منابع مشابه
Boron induced charge traps near the interface of Si/SiO2 probed by second harmonic generation
Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, USA Department of Chemical and Biomolecular Engineering, Nashville, Vanderbilt University, Tennessee 37235, USA Department of Applied Science, College of William and Mary, Williamsburg, Virginia ...
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